Investigating the Effects of Different Gate Biasing Voltages and Temperatures on RadFETs

This paper mainly focuses on the effects of different gate biasing voltages and temperatures on several kinds of RadFETs. Four kinds of gate biasing configurations (positive, zero, negative gate voltage and continuous current applied model) have been compared in terms of sensitivity to radiation. Post-irradiation characteristics of annealing or fading under different gate biasing voltages and temperatures are also studied. Samples irradiated by zero and negative voltage biasing have lower sensitivity than that of positive, but don't show significant fading. It is presented that higher temperature can promote the process of annealing.