材料科学
光敏性
光电子学
苯
晶体管
光化学
薄膜晶体管
共轭体系
分子
纳米技术
图层(电子)
有机化学
聚合物
化学
电压
复合材料
物理
量子力学
作者
Mi Yeon Cho,Su Jin Kim,Yoon Deok Han,Dong Hyuk Park,Kyung Hwan Kim,Dong Hoon Choi,Jinsoo Joo
标识
DOI:10.1002/adfm.200800358
摘要
Abstract The highly photosensitive characteristics of organic thin‐film transistors (OTFTs) made using soluble star‐shaped oligothiophenes with four‐armed π ‐conjugation paths, 4(HPBT)‐benzene and 4(HP3T)‐benzene molecules having a relatively high quantum yield, are reported. 4(HPBT)‐benzene‐based organic phototransistors (OPTs) exhibited high photosensitivity (∼2500–4300 A W −1 ) even with low optical powers (∼6.8–30 µW cm −2 ) at zero gate bias. The measured photosensitivity of the devices was much higher than that of inorganic single‐crystal Si‐based phototransistors, as well as that of other OPTs reported earlier. With the highly photosensitive characteristics of the 4(HPBT)‐benzene‐based OPTs, a high ratio of the on and off current switching of ∼4 × 10 4 with low optical power and low gate bias was observed. The slow relaxation of the photoinduced charges and charge‐trapping phenomena at the interface could lead to a reproducible memory operation for 4(HPBT)‐benzene‐based OPTs.
科研通智能强力驱动
Strongly Powered by AbleSci AI