双层石墨烯
堆积
材料科学
石墨烯
双层
纳米技术
图层(电子)
基质(水族馆)
化学气相沉积
化学
膜
有机化学
生物化学
海洋学
地质学
作者
Ran Guan,Aiheng Yuan,Birong Luo
标识
DOI:10.1002/pssr.201900605
摘要
Due to the unique bandgap tunability of bilayer graphene, the preparation of large‐sized bilayer graphene has attracted a wide range of attention. Herein, the preparation of bilayer graphene, from stacking order to growth mechanism, is reviewed, and the chemical vapor deposition (CVD) of AB‐stacked bilayer graphene on copper substrate is emphasized. Various methods and growth strategies to synthesize bilayer graphene and the corresponding growth mechanisms are discussed. Mechanisms of layer‐by‐layer growth, the hydrogen passivation of graphene edges for the formation of bilayers, and carbon atoms penetrating through a copper wall for bilayer growth are included and highlighted for a better understanding of controlling bilayer graphene uniformity and forming its stacking order. Finally, the remaining challenges and the potential development of CVD‐controlled growth of bilayer graphene are outlined.
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