极紫外光刻
极端紫外线
锡
抵抗
材料科学
吸光度
吸收(声学)
吸收光谱法
光刻胶
紫外线
光谱学
光电子学
平版印刷术
光敏性
光学
激光器
分析化学(期刊)
纳米技术
化学
物理
有机化学
图层(电子)
量子力学
冶金
复合材料
作者
Najmeh Sadegh,Maarten van der Geest,Jarich Haitjema,Filippo Campi,Sonia Castellanos,Peter M. Kraus,Albert M. Brouwer
标识
DOI:10.2494/photopolymer.33.145
摘要
Inorganic molecular materials such as tin oxo cages are a promising generation of photoresists compatible with the demands of the recently developed Extreme UltraViolet (EUV) lithography technology. Therefore, a detailed understanding of the photon-induced reactions which occur in photoresists after exposure is important. We used XUV broadband laser pulses in the range of 25 – 40 eV from a table-top high-harmonic source to expose thin films of the tin oxo cage resist to shed light on some of the photo-induced chemistry via XUV absorption spectroscopy. During the exposure, the transmitted spectra were recorded and a noticeable absorbance decrease was observed in the resist. Dill parameters were extracted to quantify the XUV induced conversion and compared to EUV exposure results at 92 eV. Based on the absorption changes, we estimate that approximately 60% of tin-carbon bonds are cleaved at the end of the exposure.
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