Investigation of Ge p-i-n photodetector as a part of pulsed laser rangefinder prototype

The process of diffusion method for production of high-speed Ge p-i-n photodiodes for a laser rangefinder with a maximum photosensitivity at the wavelength 1.54 μm and a new passivating layer of ZnSe is described. Theoretical modeling of the rangefinder operation in real conditions was performed to determine the requirements for the sensitivity of the photodetector. The threshold sensitivity of the split photodetector as a part of the model of laser rangefinder was experimentally investigated. The correspondence between the calculated values and the sensitivity of the photodetector was ascertained, which allowed to draw the conclusion about the possibility of its application as a part of laser rangefinder.