High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates.

The integration of lead zirconate titanate (Pb(Zr_xTi_1-x)O₃) (PZT) compounds on Si substrates with a smooth surface would provide a key technology for silicon photonic devices. The quality of the deposited thin film is critical in order to integrate Pb(Zr_xTi_1-x)O₃ on Si substrates for applications such as pyroelectric mid-infrared detectors or optical modulators. Here, we have applied physical vapour deposition technique using a modified molecular beam epitaxy tool to deposit perovskite Pb(Zr_xTi_1-x)O₃ on Si and Pt substrates. We have developed a method to grow crack-free PZT films on Si substrates. The fabrication procedure entailed the use of TiO₂ as a buffer layer and post annealing of the PZT/TiO₂/Si films under oxygen atmosphere. Cross section Scanning Electron Microscopy images enabled the identification of two distinct layers: PZT and TiO₂, which was also confirmed by Spectroscopic Ellipsometry. X-Ray Diffraction patterns indicated the transition from the rhombohedral to the tetragonal phase and the formation of the perovskite phase of Pb(Zr_0.44Ti_0.56)O₃.