PMOS逻辑
电源抑制比
CMOS芯片
电气工程
功率(物理)
沉降时间
工程类
电子工程
控制理论(社会学)
偏压
负荷调节
电压
直线(几何图形)
线路调节
开关电源
频率补偿
监督人
计算机科学
瞬态响应
路径(计算)
跌落电压
脉冲宽度调制
低压差调节器
相位裕度
材料科学
作者
Francesco Spreafico,Luca Sant,Richard Gaggl,A. Basçhirotto
标识
DOI:10.1109/icecs66544.2025.11270815
摘要
A Flipped-Voltage-Follower (FVF) based LDO is implemented in 55nm CMOS for low-power audio applications. It includes an auxiliary path to provide a proper ac-only bias to the bulk of the pass pMOS transistor. This improves the Power Supply Rejection Ratio (PSRR) up to 17dB in the target frequency range, from 50kHz to 2MHz, at cost of 1.5μA additional current. Thus, a PSRR of −46dB at 1MHz is measured, despite the parasitic and coupling effects of the 55nm CMOS, only 6.6μA of LDO quiescent current and a limited 65pF on-chip load capacitor. Other measurement results include a 0.016mV/V line regulation, 0.036mV/mA load regulation and 250ns settling time under a full load step. The proposed bulk-biasing LDO is able to operate with a supply voltage in the 1.08V to 1.8V range, a maximum efficiency η>91% and 80mV minimum dropout.
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