Annealing effect on ITO films prepared by DC magnetron sputtering

Indium tin oxide(ITO) films were deposited on glass substrates at room temperature by DC magnetron sputtering system, and annealed in vacuum in the 100℃～400℃ temperature range. The microstructure and electro-optical properties of the films were analyzed in order to investigate their dependences on annealing temperature. XRD results indicated films were crystalline after annealing at 200℃ and preferential crystallization along (222) direction. As the annealing temperature increased, sheet resistance of films decreased sharply, surfaces of films became smoother. Transmittance of films in visible region was improved over 85% after annealing.