外延
材料科学
焊剂(冶金)
分析化学(期刊)
结晶学
纳米技术
化学
色谱法
冶金
图层(电子)
作者
I.I. Syvorotka,D. Sugak,A. Luchechko,Yaroslav Zhydachevskyy,S. Ubizskii
标识
DOI:10.12693/aphyspola.133.954
摘要
The paper reports a growth of the high-quality Gd3Ga5O12 (GGG) homoepitaxial films by the liquid phase epitaxy technique using the PbO-B2O3 and PbO-B2O3-V2O5 fluxes.The influence of the flux composition containing V2O5 as well as the growth temperature is discussed basing on the optical absorption and the electron probe micro analysis results.
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