Gamma irradiation effect on characterization of MoO3 nanostructures films

Nano structure of MoO3films was prepared by Laser deposition technique on the substrates (glass and Si), X-ray diffractometer, and morphology, phase, nanostructure, and optical constants of the resultant films were studied using UV–visible spectroscopy. The effects of gamma irradiation with Co-60 on the characteristics of produced films were examined. The findings show that gamma irradiation has a considerable impact on the crystallographic, microstructural, and optical properties of MoO3 thin films. The XRD results revealed that the crystallity of the films deteriorates as the crystallite size decreases (from 30.3 nm to 21.2nm) with increases gamma rad. The basic orthorhombic crystal structure, however, remains unchanged. Due to the development of structure, the dislocation density and lattice strain increased as the absorbed dosage of gamma irradiation rose. The optical characteristics were determined, and the findings showed that the optical energy band gap (Eg) decreased from 3.22 before irradiation to 2.66 eV after irradiation; also low transmittance (34-24%) has been observed which may provide a promising platform for energy-saving smart windows, and other electro-optical applications. The main electrical parameters of the junctions such as saturation current (Is), ideality factor (β), barrier height (Φb) were calculated using the thermionic emission (TE) theory. The (Φb) and (β) values were calculated as 0.63 eV, 7.08 and 0.59eV, 2.07 before and after irradiation for MoO3/p-Si MIS junction, respectively. Because of the radiation gamma property, the results showed that the fabricated devices could be used in a variety of applications. To the best of our knowledge, there is no research on the I–V approach for studying the exposure of MoO3 thin films to gamma-ray irradiation. As a result, we expect that our research will contribute significantly to the literature.