材料科学
凝聚态物理
居里温度
磁化
矫顽力
铁磁性
薄膜
电阻率和电导率
外延
脉冲激光沉积
等温过程
磁场
复合材料
纳米技术
物理
电气工程
工程类
热力学
量子力学
图层(电子)
作者
Guru Dutt Gupt,R. S. Dhaka
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2023-01-26
卷期号:41 (2)
被引量:4
摘要
We report the physical properties of Co2CrAl Heusler alloy epitaxial thin films grown on a single-crystalline MgO(001) substrate using a pulsed laser deposition technique. The x-ray diffraction pattern in the θ-2θ mode showed the film growth in a single phase B2-type ordered cubic structure with the presence of (002) and (004) peaks, and the film oriented along the MgO(001) direction. The ϕ scan along the (220) plane confirms the fourfold symmetry, and the epitaxial growth relation is found to be Co2CrAl(001)[100]||MgO(001)[110]. The thickness of about 12 nm is extracted through the analysis of x-ray reflectivity data. The isothermal magnetization (M–H) curves confirm the ferromagnetic (FM) nature of the thin film having significant hysteresis at 5 and 300 K. From the in-plane M–H curves, the saturation magnetization values are determined to be 2.1 μB/f.u. at 5 K and 1.6 μB/f.u. at 300 K, which suggest the soft FM behavior in the film having the coercive field ≈522 Oe at 5 K. The thermomagnetization measurements at 500 Oe magnetic field show the bifurcation between field-cooled and zero-field-cooled curves below about 100 K. The normalized field-cooled magnetization curve follows the T2 dependency, and the analysis reveals the Curie temperature around 335±11 K. Moreover, the low-temperature resistivity indicates semiconducting behavior with the temperature, and we find a negative temperature coefficient of resistivity (5.2×10−4/K).
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