材料科学
响应度
暗电流
光电子学
紫外线
基质(水族馆)
蓝宝石
X射线光电子能谱
溅射沉积
光电探测器
薄膜
分析化学(期刊)
光学
溅射
纳米技术
核磁共振
物理
激光器
海洋学
化学
色谱法
地质学
作者
Guo Dong Wang,Haohan Wang,Tingyu Chen,Yanji Feng,Hua Zeng,Lanlan Guo,Xiaolian Liu,Yingli Yang
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2023-12-12
卷期号:35 (9): 095201-095201
被引量:1
标识
DOI:10.1088/1361-6528/ad0f57
摘要
Abstract Gallium oxide (Ga 2 O 3 ) possesses a band gap of approximately 4.9 eV, aligning its detection wavelength within the solar-blind region, making it an ideal semiconductor material for solar-blind photodetectors. This study aims to enhance the performance of Ga 2 O 3 ultraviolet (UV) detectors by pre-depositing a Ga 2 O 3 seed layer on a c -plane sapphire substrate. The x-ray diffraction and x-ray photoelectron spectroscopy analyses validated that the deposited films, following high-temperature annealing, comprised β -Ga 2 O 3 . Comparing samples with and without a 20 nm seed layer, it was found that the former exhibited fewer oxygen defects and substantially improved crystal quality. The incorporation of the seed layer led to the realization of detectors with remarkably low dark current (≤15.3 fA). Moreover, the photo-to-dark current ratio was enhanced by 30% (surpassing 1.3 × 10 4 ) and the response/recovery time reduced to 0.9 s/0.01 s, indicating faster performance. Furthermore, these detectors demonstrated higher responsivity (4.8 mA W −1 ), improved detectivity (2.49 × 10 16 Jones), and excellent solar-blind characteristics. This study serves as a foundational stepping toward achieving high-quality β -Ga 2 O 3 thin film and UV detector arrays.
科研通智能强力驱动
Strongly Powered by AbleSci AI