Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices

Coexistence of Rashba-type spin splitting (in-plane spin direction) and band splitting at the K/K′ valleys (out-of-plane spin direction) makes the FRS AgBiP₂Te₆ monolayer a promising candidate for 2D spin FET and spin/valley Hall effect devices.