Analysis of the relationship between the distance barriers GaAs and GaAs with the transmission coefficient and the reflection coefficient

Abstract The tunneling effect is a phenomenon of the behavior of particles with small energy having a probability to penetrate the barrier potential. The transmission coefficient is the ratio of breakthrough particles to incoming particles. The reflection coefficient is the ratio of reflected particles to incoming particles. The tunneling effect is analyzed using the Schrodinger equation with the matrix propagation method. The purpose of this study is to analyze the relationship between the distance barriers with the transmission coefficient and the reflection coefficient. The barriers used are GaAs and GaAs with potential energy of 1,424 eV with a bandgap of 0.565 nm. The researcher used 1 eV with a distance between barriers 0.25-2 nm with a change in the distance between barriers is 0.25 nm. Changes in the distance between barriers GaAs and GaAs affect the value of the transmission coefficient and the reflection coefficient. Changes in the distance between the barrier produce a transmission coefficient and a reflection coefficient that is periodic because the distance between the barriers has the form of complex exponential functions. This research application is used to design and develop new structures in improving the quality of semiconductor devices such as diodes, transistors, and IC.