掺杂剂
分子动力学
原子间势
密度泛函理论
工作流程
兴奋剂
计算机科学
工作(物理)
标杆管理
材料科学
机器学习
计算科学
计算模型
人工智能
材料信息学
纳米技术
能量(信号处理)
实验数据
人口
统计物理学
计算模拟
能量最小化
化学物理
图层(电子)
作者
Abrar Faiyad,Ashlie Martini
标识
DOI:10.1021/acs.jctc.5c02004
摘要
Dopants can tune the performance of MoS 2 in various applications, but the use of molecular dynamics simulations for doped MoS 2 materials discovery is limited by the lack of multidopant interatomic potentials. Universal machine learning interatomic potentials (MLIPs) could be a solution, but the accuracy of these potentials must first be evaluated. Here, we evaluate the accuracy of a recently developed MLIP, META’s Universal Model for Atoms, for 25 different MoS 2 dopants spanning metals, nonmetals, and transition metals in Mo-substitution, S-substitution, and intercalated positions by benchmarking the MLIP-predicted formation energy and the dopant-induced structural change against density functional theory (DFT) calculations. The computational framework for MLIP validation and simulations is described in detail, and the source code is made available online. The MLIP is then demonstrated by performing heating–cooling simulations of MoS 2 supercells with all 25 dopants. These simulations capture complex phenomena including dopant clustering, MoS 2 layer fracturing, interlayer diffusion, and chemical compound formation at orders-of-magnitude reduced computational cost compared to DFT. This work provides a computational workflow for the application-oriented design of doped-MoS 2, enabling high-throughput screening of dopant candidates and optimization of compositions for targeted tribological, electronic, and optoelectronic performance.
科研通智能强力驱动
Strongly Powered by AbleSci AI