钝化
退火(玻璃)
硫黄
材料科学
原子层沉积
光电子学
沉积(地质)
形成气体
纳米技术
化学工程
薄膜
冶金
图层(电子)
工程类
古生物学
沉积物
生物
作者
Zhengyang Chen,Zhangsheng Lan,Yiran Lin,Tomonori Nishimura,Choonghyun Lee,Yi Zhao
摘要
This paper presents a comprehensive exploration of low interface trap density (Dit) in HfO2/Si0.73Ge0.27 metal-oxide semiconductor (MOS) capacitors achieved through sulfur passivation and post-deposition annealing (PDA). Our investigation revealed that devices subjected to sulfur passivation and PDA exhibit noteworthy reductions in Dit and hysteresis. Specifically, a low Dit value of 1.2 × 1011 eV−1 cm−2 has been achieved at Ei–0.1 eV for the SiGe MOS device. The observed enhancement in interface properties can be attributed to two key factors: the reduction of the GeOx concentration in the interfacial layer (IL) by sulfur passivation on the SiGe surface and the IL densification with stoichiometric oxygen during PDA.
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