A novel radiation-dependence model of InP HBTs including gamma radiation effects

In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-induced device degradation effects including both DC and AC characteristics, a set of empirical expressions describing the device degradation trend are presented and incorporated into the Keysight model. To validate the effective of the proposed model, a series of radiation experiments are performed. The correctness of the novel model is validated by comparing experimental and simulated results before and after radiation.