异质结
光催化
可见光谱
兴奋剂
化学
电子转移
降级(电信)
光化学
半导体
载流子
吸收(声学)
材料科学
光电子学
有机化学
电信
复合材料
催化作用
计算机科学
作者
An Chen,Yiwen Xie,Rui Lü,Jiaying Luo,Tian Shang,Yang Xu,Dongmei Jiang,Qingfeng Zhan
标识
DOI:10.1016/j.apsusc.2023.158465
摘要
In this paper, a novel Bi2SiO5/Ni-Ag6Si2O7 semiconductor with remarkable visible light absorption ability and electron transfer efficiency was synthesized through ice bath deposition and hydrothermal method. The addition of Ni2+ reduced the particle size of Ag6Si2O7 and increased specific surface area. Under simulated sunlight, the degradation rate of the optimal samples for MO reached 0.03743 min−1, which was 7.28 times, 3.15 times and 1.56 times than that of Bi2SiO5 and Ag6Si2O7 and Bi2SiO5/Ag6Si2O7, respectively. The formation of Z-scheme heterojunction inhibited the photoinduced carrier recombination, promoted the generation of active free radicals and preserved high redox capacity of photogenerated carriers. According to the density functional theory (DFT) and M−S test, an intermediate doping energy level was introduced to Ag6Si2O7, which acted as the capture center of photogenerated carriers and effectively adjusted the energy band structure. The impurity energy level further inhibited the recombination of carriers and promoted the electron transfer in the Z-scheme transfer mechanism. Moreover, the introduction of Ni2+ further enhanced the visible light response of photocatalysts. Therefore, the improved photocatalytic ability was assigned to the introduction of Ni2+ ions based on the formation of heterojunction.
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