High-efficiency High-speed UV Bandpass GaN/AlGaN Heterojunction Photodetectors Using Polarization Induced Potential Barrier

A GaN/AlGaN heterojunction UV photodetector using polarization-induced potential barrier was proposed and fabricated in this work. The negative polarization charges raise the potential barrier at the (0001)-plane GaN/AlGaN heterointerface, resulting in a low dark current and a bandpass spectral response between the GaN and AlGaN absorption edges. The detector also demonstrates stable and fast photoresponse.