Photoelectric Integrated Device With Dual Photodiode-Body-Biased MOSFETs Enabling Near Infrared Eye Tracking for Augmented and Virtual Realities

Aiming for eye-tracking applications, we report on a photoelectric integrated device (PID) formed by dual photodiode-body-biased MOSFETs (PD-MOS) in a differential setup. The CMOS-processed integrated device demonstrates low dark current of ~10pA, high gain of ${4}\times {10} ^{{6}}$ @940nm and 100pW/cm2, a wide dynamic range of 160dB and a noise current of 32fA/Hz $^{{\text {1/2}}}$ @1kHz. It outperforms photodiode, phototransistor, avalanche photodiode and silicon photomultiplier in terms of signal to noise ratio, dynamic range, form factor, and power consumption, making it promising for eye tracking and tracing in augmented reality, virtual reality, and mixed reality applications.