A 700 V lateral power MOSFET with narrow gap double metal field plates realizing low on-resistance and long-term stability of performance

A 700 V lateral power MOSFET with a narrow gap double metal field plate structure is proposed. The MOSFET exhibits an improved specific on-resistance of 26 /spl Omega/ mm/sup 2/ and achieves extremely stable performance under long-term high-voltage operation. A power IC, which integrates the developed MOSFET using 1 /spl mu/m CMOS process, has successfully been applied to AC to DC converters in portable appliances.