Consistent small-signal and RF-noise parameter modelling of carbon doped InP/InGaAs HBT

In this work a consistent small-signal and rf-noise parameter model of InP/InGaAs HBT is presented. This model is based on the typical three-mesa design of HBT and correlates intrinsic noise sources to specific device regions. Bias dependent investigation of S- and RF-noise parameters proves the consistency of the model.