Comprehensive Analysis of Floating-Body Effect and Data Retention in the Next Generation DRAM Cell

Floating-body effect and data retention in verticalstacked DRAM cells were investigated with the impact of device structure, bulk defects and interface traps. An approach for data retention analysis of DRAM cells with floating-body effect was proposed to estimate the maximum body charging state, the maximum cell capacitor discharging rate and the worst data retention under random bit line pulses.