Comparison among Silicon modulators based on Free-Carrier Plasma Dispersion Effect

In this work, a deep understanding on performance compromises in the design of Silicon phase modulators is presented. Simplified modelling of Silicon modulators is presented and validated against full simulation. It is thus used to provide an analysis of compromises in the design of depletion and injection based modulators. Furthermore, experimental demonstration of 40 Gbit/s depletion based modulators is reported in 200 mm and 300 mm SOI technology.