Two-dimensional piezoelectric AlSiX2 (X = N, P, As) semiconductors with Raman activity, favorable band-gap, and high carrier mobility based on first-principles calculations

We construct two-dimensional AlSiX 2 (X = N, P, As) monolayers and examine their stabilities, Raman activity, piezoelectricity, as well as electronic/transport properties for various applications, using first-principles calculations.