Low‐Symmetry Van der Waals Dielectric GaInS3 Triggered 2D MoS2 Giant Anisotropy via Symmetry Engineering

Abstract Low‐symmetry structures in van der Waals materials have facilitated the advancement of anisotropic electronic and optoelectronic devices. However, the intrinsic low symmetry structure exhibits a small adjustable anisotropy ratio (1–10), which hinders its further assembly and processing into high‐performance devices. Here, a novel 2D anisotropic dielectric, GaInS 3 (GIS), which induces isotropic MoS 2 to exhibit significant anisotropic optical and electrical responses is demonstrated. With the excellent gate modulation ability of 2D GIS (dielectric constant k ∼12), MoS 2 field effect transistor (FET) shows an adjustable conductance ratio from isotropic to anisotropic under dual‐gate modulation, up to 10 6 . Theoretical calculations indicate that anisotropy originates from lattice mismatch‐induced charge density deformation at the interface. Moreover, the MoS 2 /GIS photodetector demonstrates high responsivity (≈4750 A W −1 ) and a large dichroic ratio (≈167). The anisotropic van der Waals dielectric GIS paves the way for the development of 2D transition metal dichalcogenides (TMDCs) in the fields of anisotropic photonics, electronics, and optoelectronics.