Bi4Ti3O12‐Based High‐temperature Piezoelectric Ceramics and Their Applications

Bi 4 Ti 3 O 12 (BIT) is one of the bismuth layer-structured ferroelectrics (BLSFs), with a high Curie temperature ( T c ) of 675 °C, and has been widely investigated as the key component of piezoelectric vibration sensors at temperatures over 400 °C. Recently, lots of work has been done to overcome its poor piezoelectricity and large electrical conductivity to satisfy the requirements for high-temperature applications in the fields of aerospace, nuclear plants, etc. from the aspects of multiscale structural regulation, doping strategy, defect engineering, and so on. In this chapter, based on the achievements over a half century, the crystal structure, preparation process, domain structure, electrical properties, stability under external fields, and device applications are briefly summarized, and we think this review would shed new light on some novel strategies to optimize the properties and therefore their practical applications at high temperatures.