An Event-Driven Charge Pump Based OCL-LDO with 410nA IQ and 30ns Recovery Time

To achieve fast transient response with low power consumption for output-capacitorless low-dropout regulator (OCL-LDO), an event-driven charge pump (CP) loop with the dynamic strength control (DSC), is proposed in this paper. A prototype chip was fabricated in 65nm CMOS technology. With 410nA quiescent current (IQ), the proposed OCL-LDO can recover within 30 ns under 200mA/10ns loading change, achieving an excellent FoM of 0.1 fs.