Prediction of Absolute Hall Effect Sensitivity and Minimum Magnetic Resolution for Two-Dimensional Rhenium Disulfide Multilayer Magnetic Sensors without Magnetic Fields

Absolute Hall-effect sensitivity (S A ) and minimum magnetic resolution (B min ) of two-dimensional (2D) van der Waals Hall elements are predicted without magnetic fields by considering the drain voltage-dependent transconductance and current power spectrum density (PSD).The measured drain-bias-dependent PSD of rhenium disulfide multilayers is suitably described by the carrier number fluctuation noise model, indicating that the effects of carrier trapping/de-trapping into oxide traps dominate the observed current variations.To achieve high currentnormalized Hall sensitivity and S A with a low B min at a specific current value, the contact resistance and oxide trap density should be further optimized.Our discussion provides an effective approach for the optimization of 2D multilayer-based Hall elements.