变硬
纳米尺度
材料科学
化学气相沉积
薄膜
纳米技术
复合材料
光电子学
作者
Kalaiarasan Meganathan,G. Mangamma,M. J. Swaminadhan,Vijaykumar Murugan,Nitin Babu Shinde,Saurabh Ghosh,Senthil Kumar Eswaran
标识
DOI:10.1021/acs.jpclett.3c03512
摘要
Understanding the nanoscale elastic-size-effects of atomically thin transition-metal dichalcogenides (TMDs) as a function of thickness underpins the avenue of flexible 2D electronics. In this work, we employed the atomic force acoustic microscopy (AFAM) technique to investigate the thickness-dependent elastic properties of CVD grown 2H-MoS2 films. The monolayer MoS2 exhibited a Young's modulus of 273 ± 27 GPa. Our systematic analysis from bulk to monolayer suggests that the 2H-MoS2 phase exhibits nanoscale elastic-stiffening behavior with decreasing number of layers (thickness). The Young's modulus increased by a factor of ∼2.7 for monolayer MoS2 when compared with the bulk. First-principle DFT calculations affirm the nanoscale elastic-stiffening behavior of MoS2 with decreasing number of layers. Our findings suggest that the observed elastic stiffening is due to the interlayer sliding, which may be facilitated by defects in MoS2 layers. The observed elastic stiffening may be of potential importance for understanding TMD based nanomechanical devices.
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