Steep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYO<inf>x</inf>

Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers, which is assumed to be caused by the traps in the ferroelectric oxide layer.