量子点
亮度
光电子学
发光二极管
二极管
量子效率
材料科学
芯(光纤)
光学
物理
作者
Huaibin Shen,Qiang Gao,Yanbin Zhang,Yue Lin,Qingli Lin,Zhaohan Li,Ling Chen,Zaiping Zeng,Xiaoguang Li,Yu Jia,Shujie Wang,Zuliang Du,Lin Song Li,Zhenyu Zhang
出处
期刊:Nature Photonics
[Nature Portfolio]
日期:2019-02-21
卷期号:13 (3): 192-197
被引量:828
标识
DOI:10.1038/s41566-019-0364-z
摘要
Quantum dot light-emitting diodes are promising light sources for applications in displays. However, to date, there have been no reports of devices that simultaneously offer both high brightness and high external quantum efficiency. Here, we report red, green and blue quantum dot light-emitting diodes based on CdSe/ZnSe core/shell structures that have these attributes. We demonstrate devices with maximum external quantum efficiencies of 21.6%, 22.9% and 8.05% for red, green and blue colours with corresponding brightness of 13,300 cd m–2, 52,500 cd m–2 and 10,100 cd m–2. The devices also offer peak luminance of 356,000 cd m–2, 614,000 cd m–2 and 62,600 cd m–2, respectively. We postulate that this high performance is due to the use of Se throughout the core/shell regions and the existence of alloyed bridging layers at the core/shell interfaces. This study suggests that in the future visible quantum dot light-emitting diodes will also be suitable for lighting applications. Red, green and blue CdSe/ZnSe quantum dot light-emitting diodes combine efficient operation with high brightness.
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