Local degradation of selectively oxidized AlGaAs/AlAs distributed Bragg reflectors in lateral-injection vertical-cavity surface-emitting lasers

We show the local degradation of a selectively oxidized top distributed Bragg reflector (DBR) in a lateral-junction vertical-cavity surface-emitting laser (LJ-VCSEL) working at room temperature in continuous-wave operation. The measurements were carried out by a scanning microluminescence system used in reflection mode. The injection of a few milliamps in continuous-wave operation at room temperature in the LJ-VCSEL induces damage both in the DBRs and in the active area. The submicron resolution maps of the reflected laser intensity, recorded from the top surface of the LJ-VCSEL, show a strong local change in the top DBR reflectivity before and after current injection. The μ-photoluminescence map, recorded after the device failure, shows that the radiative recombination is strongly decreased in the damaged area of the device.