Heterojunction interface-induced enhancement of position-sensitive photodetection in the nano-film of Ti/SrTiO3 based on the p-type silicon

Complex oxide perovskites exhibit a range of novel, to the best of our knowledge, physical phenomena and have gained popularity as a material system in the past decades. Strontium titanate ( S r T i O 3 ) is an iconic material among oxide perovskite due to its unusual electronic transport behavior and has been investigated in many electronic devices. In this Letter, a type of S r T i O 3 nano-film-induced enhancement of lateral photovoltaic effect (LPE) is observed in the heterojunction of Ti/ S r T i O 3 /p-type Si. Optimizing the thickness of S r T i O 3 , the LPE sensitivity can reach 123.2 mV/mm, which is much higher than the sensitivity in the control samples of Ti/Si (55.3 mV/mm) and S r T i O 3 / S i ( ∼ 0 m V / m m ). These findings offer an effective way to improve the sensitivity and will be helpful in the development of oxide-based photodetection devices.