A 16-kb Antifuse One-Time-Programmable Memory in 5-nm High-K Metal-Gate FinFET CMOS Featuring Bootstrap High-Voltage Scheme, Read Endpoint Detection, and Pseudodifferential Sensing

This paper presents a 16Kb antifuse macro in a 5nm high-K, metal-gate FinFET CMOS for the first time. Bootstrap high voltage scheme (BHVS), read endpoint detection (REPD) and pseudo-differential sensing (PDS) are proposed to lower intrinsic bit-error-rate (BER) below 1ppm for in-field programming, and achieves 10 years of data retention at 125∘C.