光电二极管
电容
光电子学
材料科学
半导体
扩散电容
p-n结
半导体器件
光学
物理
纳米技术
电极
量子力学
图层(电子)
作者
H. Holloway,M. D. Hurley,E. B. Schermer
摘要
The lateral-collection photodiode (LCP) is a novel device in which the p-n junction of a conventional photodiode is replaced by a matrix of small p-n junctions that collect photogenerated minority carriers from the intervening region. The LCP offers reduced capacitance and, in some cases, increased detectivity. IV-VI semiconductor LCP’s for the 3–5-μm spectral region show a capacitance reduction by up to a factor of 20 and a Johnson-noise-limited detectivity increase by up to a factor of 3 relative to a conventional photodiode in the same material.
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