Large‐Area Monolayer p‐Type Semiconductor Films Toward High‐Performance Electrical Device Arrays

Abstract 2D semiconductors open new avenues in the post‐Moore era for semiconductor technologies immune from the short‐channel effect due to their atomic‐scale thicknesses and dangling‐bond‐free surfaces. However, it still remains a big challenge to obtain large‐area and high‐quality monolayer p‐type semiconductors so far. Herein, a controlled nucleation is realized by tuning the evaporation areas of Se precursors during the p‐type WSe 2 growth. By optimizing the nucleation density, centimeter‐scale uniform monolayer WSe 2 and Nb‐incorporated WSe 2 films are synthesized. The field effect transistor array based on WSe 2 film exhibits p‐type behavior with hole mobilities of 34 ± 17 cm 2 V −1 s −1 and an average on/off ratio of 4 × 10 7 , which can be further improved by Nb incorporation with much higher hole mobility of 48 ± 16 cm 2 V −1 s −1 with an average on/off ratio of ≈10 8 . The work paves the way for synthesizing large‐scale uniform 2D p‐type semiconductors for electrical devices and integrated circuits.