Physical properties of the heterojunction МоОх/n-CdTe as a function of the parameters of CdTe crystals

MoO_x/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ₁=0.4 Ω⋅cm, ρ₂=10 Ω⋅cm, ρ₃=40 Ω⋅cm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoO_x/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.