PMJ01 panel discussion review: issues on mask technology for 100-nm lithography

We discussed the following topics at the panel discussion of Photomask Japan 2001. 1) Lithography roadmap from 130-nm to 90-nm node. 2) Lithography tool selection, KrF, ArF, or F2 for each node. 3) Mask technology issues for ArF and F2 lithography. 4) CD control and MEEF reduction. 5) OPC and PSM applications. Panelists agreed that critical issues for 100-nm lithography are CD control, defect control and mask cost. Mask suppliers presented potential solutions for these issues: improvement of mask writing tools, refinement of resist process etc. By solving these issues 100-nm lithography can be realized by 2004.