EUV light source for high-NA and low-NA lithography

ASML NXE scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. EUV sources have improved performance and availability. In this paper we provide an overview of 13.5nm tin laserproduced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM for the most advanced nodes. Sources at customers operate at ~250 Watt power with high availability. Progress in Collector Lifetime and EUV Source performance is shown. High NA EUVL Scanners are in development for future nodes of device manufacturing, with new requirements for source geometry and few new requirements for source performance. In this paper we additionally discuss our progress on the High NA source towards shipment to the customer later this year. Finally, we provide an update on power scaling at ASMLs research systems including reaching a new 600W milestone for EUV Sources and the next steps towards even higher powers.