Surge Current Capability of Dual-Chip Packaged SiC Schottky Barrier Diodes

Abstract The surge current capability is one of the important key parameters for the application of silicon carbide (SiC) Schottky barrier diode (SBD) in power converters. A comparison is conducted between the surge current capability of single-chip packaged SiC SBD and dual-chip packaged SiC SBD. The result indicates that the dual-chip SBD with the same power have a higher non-repetitive surge current limit. This article also focuses on the prediction of non-repetitive surge current limits for dual-chip packaged SiC SBDs using an electrothermal model. The simulation and the actual device test results are matching well within 2.8 % margin. Thus, it represents this simulation model that can be applied to predict the surge current capacity of the dual-chip packaged SiC SBD.