Multilevel Photonic Transistor Memory Devices Based on 1D Electrospun Semiconducting Polymer /Perovskite Composite Nanofibers

Abstract Photonic field‐effect transistor (FET) memory devices offer unique advantages over conventional voltage‐driven memory devices, such as noncontact programming capability, rapid data transmission, and low power consumption. In this article, the first example of a nanofiber‐only photonic FET memory device is reported. Perovskite nanocrystal (βNC)‐embedded polythiophenes are employed as 1D semiconducting channels of the nanofiber matrix. A decent On/Off current ratio of ≈10 3 is reached for the best device with a prolonged data retention of over 10 4 s, attributing to the favorable energy level alignment and molecular packing of conjugated polymers in nanofibers. The composite nanofiber system exhibits superior photoresponsivity and charge retention, outperforming its film‐based counterpart owing to its regular 1D confined structure, and well‐dispersed βNCs. Collectively, the structurally fine‐tuned conjugated polymer and the 1D confined structure in the nanofiber promise good data discriminability and a highly fault‐tolerant photonic memory device. In addition, the fiber‐based flexible memory device exhibits excellent photonic memory performance, indicating its integrity for application in wearable electronics. The current system represents the first application of 1D perovskite nanocrystal/conjugated polymer composite nanofibers for high‐performance photonic memory devices, which reveals their potential to make composite nanostructures for novel pioneering photonic applications.