Light emitting diodes with extremely high extraction-efficiency for electroluminescence refrigeration
作者
Shui-Qing Yu,N. Rider,D. Ding,J.-B. Wang,S. R. Johnson,Y.–H. Zhang
标识
DOI：10.1109/qels.2007.4431445
摘要
InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.
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(2025-6-4)
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