反应离子刻蚀
硅
材料科学
深反应离子刻蚀
纳米技术
离子
蚀刻(微加工)
光电子学
化学
有机化学
图层(电子)
作者
Richa Agrawal,Nathan Marchack,Devi Koty,Hien Nguyen,Qingyun Yang,Rosa Goss,Steve Molis,Marinus Hopstaken,B. To,Roger Goss,Jose Daboin,Jeffrey C. Shearer,Robert L. Bruce
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2025-04-24
卷期号:43 (3)
被引量:3
摘要
Bosch processes involving C4F8 and SF6 have been conventionally used for through-silicon via etch. Given the high global warming potential (GWP) of C4F8 and the increasing importance of deep-Si etch processes for packaging applications in future technology nodes, it is of great interest to investigate alternative plasma chemistries to focus on sustainability in future process development. Given their lower GWPs, C4F6 and CH4 admixtures have been investigated as an alternative to C4F8 and BCl3 has been utilized as an etchant additive along with SF6 in a single-step non-Bosch process. Parametric experiments including precursor combination, pressure, and substrate temperatures have been presented. With the single-step admixture gas etching, “transition” discontinuities are observed for which a formation mechanism is proposed. Geometric and depth dependencies are analyzed in the context of this and previous work. Optical emission spectra of the gas phase are discussed; sample surface analyses are done using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry and results are presented.
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