二极管
光电子学
材料科学
雪崩二极管
补偿(心理学)
雪崩击穿
猝灭(荧光)
电压
单光子雪崩二极管
击穿电压
对偶(语法数字)
电气工程
物理
雪崩光电二极管
光学
探测器
工程类
荧光
心理学
艺术
文学类
精神分析
作者
Sundo Kim,Jin-Seok Oh,Dongsuk Jeon,Inyong Kwon
标识
DOI:10.1109/tim.2025.3553229
摘要
A front-end circuit of single-photon avalanche diode (SPAD) which achieves dual active quenching and compensates the breakdown voltage shift due to temperature is presented in this article. A well-defined quenching circuit reduces noise signals such as dark count rate (DCR) and afterpulsing probability and enhances resolutions when applied to imaging applications. Meanwhile, it requires a compact design to optimize light absorption. In addition, the inherent breakdown-voltage of SPAD is vulnerable to its temperature variation, leading to a significant performance degradation. The proposed circuit achieves dual active quenching by a common-source (CS) amplifier, controlling anode and cathode at the same time. Moreover, it mitigates the breakdown-voltage shift by exploiting the characteristic that MOSFET current and resistance decrease as temperature increases, maintaining a constant excess bias voltage for SPAD. Simulation results demonstrate that the quenching time has decreased by 45% compared to conventional approaches. Measurement results indicate a twofold reduction in breakdown-voltage shift with temperature variation, along with a 30% reduction in DCR and a 40% reduction in afterpulsing probability. The designed circuits were fabricated using $0.18~\mu $ m complementary metal-oxide-semiconductor (CMOS) technology.
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