分子束外延
亚氧化物
材料科学
薄膜
外延
基质(水族馆)
分析化学(期刊)
异质结
解吸
光电子学
纳米技术
硅
化学
物理化学
吸附
图层(电子)
色谱法
地质学
海洋学
作者
Kingsley O. Egbo,E. Luna,Jonas Lähnemann,Georg Hoffmann,A. Trampert,Jona Grümbel,Elias Kluth,Martin Feneberg,R. Goldhahn,Oliver Bierwagen
摘要
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450{\deg}C. Hence, we present an alternative pathway to overcome the limitations of high Sn or SnO$_2$ cell temperatures and narrow growth windows encountered in previous MBE growth of metastable SnO. In-situ laser reflectometry and line-of-sight quadrupole mass spectrometry were used to investigate the rate of SnO desorption as a function of substrate temperature. While SnO ad-molecules desorption at Ts = 450{\deg}C was growth-rate limiting,the SnO films did not desorb at this temperature after growth in vacuum. The SnO (001) thin films are transparent and unintentionally p-type doped, with hole concentrations and mobilities in the range of 0.9 to 6.0x10$^{18}$cm$^{-3}$ and 2.0 to 5.5 cm$^2$/V.s, respectively. These p-type SnO films obtained at low temperatures are promising for back-end-of-line (BEOL) compatible applications and for integration with n-type oxides in p-n heterojunction and field-effect transistors
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