带隙基准
温度系数
带隙
电压
电压基准
大气温度范围
CMOS芯片
硅带隙温度传感器
材料科学
光电子学
直线(几何图形)
温度测量
物理
航程(航空)
电气工程
拓扑(电路)
数学
工程类
跌落电压
热力学
几何学
复合材料
作者
Chang-Chi Lee,Hou-Ming Chen,Chi-Chang Lu,Bo‐Yi Lee,Hsien-Chi Huang,He-Sheng Fu,Yongxin Lin
出处
期刊:IEEE Access
[Institute of Electrical and Electronics Engineers]
日期:2020-01-01
卷期号:8: 62632-62638
被引量:31
标识
DOI:10.1109/access.2020.2984800
摘要
In this study, a precision bandgap reference with a v-curve correction (VCC) circuit is presented. The proposed VCC circuit generates a correction voltage to reduce the temperature drift of the reference voltage and achieves a low temperature coefficient (TC) in a wide temperature range. The proposed bandgap reference was designed and fabricated using a standard TSMC 0.18-$\mu \text{m}$ 1P6M CMOS technology with an active area of 0.0139 mm2. The measured results show that the proposed bandgap reference achieves a TC of 1.9-5.28 ppm/°C over a temperature range of -40°C to 140 °C at a supply voltage of 1.8 V. In addition, the circuit demonstrated a line regulation of 0.033 %/V for supply voltages of 1.2 - 1.8 V at room temperature.
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