Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET

The authors report on the optical responses of a p-channel In0.49Ga0.51P/GaAs/In0.13Ga0.87As pseudomorphic MODFET with a gate length of 1 µm. The photocurrent of the device is –0.36 mA at Vgs = –0.2 V and Vds = –3.5 V, with incident optical power of 2.15 mW. A significantly high responsivity was obtained at low incident optical power range. Current gain cut-off frequency and maximum available gain cut-off frequency were increased by 20 and 10%, respectively, under optical illuminatnon.