Novel high quantum efficiency Si-TaSi2 eutectic photodiodes

A high quantum efficiency photodiode has been fabricated using the in situ junctions in a Si-TaSi2 eutectic composite. Due to the three-dimensional distribution of junctions in this photodiode, it yields a nearly constant quantum efficiency of about 50% between 450 and 1000 nm. In addition, the average lateral distance between junctions of only 8 μm gives this novel photodiode an inherently good spatial resolution for photodiode array applications.