系统间交叉
光致发光
超快激光光谱学
光电子学
桥接(联网)
二极管
量子产额
荧光
量子效率
光化学
化学
有机发光二极管
光谱学
材料科学
超短脉冲
吸收光谱法
荧光光谱法
吸收(声学)
化学物理
物理
光学
量子点
作者
Piyush Singh,Soham Mukherjee,S. Majumdar,Pradip Pattanayak,Shrestha Banerjee,Pradipta Purkayastha,Pramit Kumar Chowdhury,Andrew J. Musser,Sujit Kumar Ghosh
标识
DOI:10.1021/acs.jpcb.6c06737
摘要
Abstract Efficiency roll-off and limited operational lifetime remain major limitations in thermally activated delayed fluorescence (TADF)-based organic light-emitting diodes (OLEDs), primarily due to inefficient triplet-to-singlet conversion. In this study, we establish a structure–property relationship that enables modulation of reverse intersystem crossing (rISC) mechanism via the nature of the bridging unit. Temperature-dependent time-resolved photoluminescence reveals that the en-one-bridged compound (TCON) exhibits an exceptionally shorter delayed fluorescence (DF) lifetime of 185 ns, compared to 292 and 456 μs for its C≡C-bridged (TyneN) and nonbridged (TBrN) analogs, respectively. TCON also displays temperature-independent rISC, indicative of a barrierless, down-converted rISC mechanism, whereas the other compounds follow a conventional thermally activated process. Ultrafast transient absorption spectroscopy further supports rapid intersystem crossing dynamics in TCON and the participation of higher-lying triplet states in the down-converted rISC process. Although TCON shows a relatively low photoluminescence quantum yield (∼12%) and weak DF intensity, these findings provide valuable insights into the fundamental spin-flipping dynamics and establish a structure–property relationship for developing next-generation OLED emitters.
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